preliminary solid state devices, inc. spmq496-01 features: data sheet #: PM0010a maximum ratings collector to emiter voltage volts 400 amp/600 volts igbt power module for space applications designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. characteristic symbol value unit v ces 600 continuous collector current amps 400 200 i c1 i c2 operating and storage temperature -55 to +150 t op & t stg pulse collector current 1/ amps i cm thermal resistance, junction to base o c/w 0.14 1 jb o c 600 aspm gate to collector voltage volts v ges " 20 electrical schematic ? high current switching for motor drives and inverters for space applications. ? push-pull configuration with freewheeling diodes. ? low saturation voltage at high currents. ? low mechanical stress design. ? hermetic sealed construction for aerospace applications. ? excellent thermal management. ? full power screened hermetic discretes. ? tx, txv, and s-level screening available. ? consult factory for: ? faster switching speeds; ? other bridge configurations and terminal styles. t b = 25 o c t b = 90 o c clamped inductive load current (t b = 125 e c, v cc = 480v, v ge = 15v, l = 30uh, r g = 10 s amps i lm 200 reverse voltage avalange energy 1/ (i c = 200a) mj e arv 5.6 w w/ o c 1250 10 p d1 p d2 total module dissipation @t b = 25 o c dissipation derating from t b = 25 o c to t b = 150 o c 1/ pulse duration limited by t jmax ; repetative rating
solid state devices, inc. preliminary 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 electrical characteristics @ t j =25 o c (unless otherwise specified) collector - emitter breakdown voltage (i ces = 250 : a, v ge = 0v) rating symbol min max unit package outline: aspm gate - emitter threshold voltage (i c = 5ma, v ce = v ge ) v ce(sat)2 v ce(sat)1 (t b = 25 o c) (t b = 90 o c) 3.1 2.5 spmq496-01 - - gate-emitter leakage current ( v ge = " 20v, v ce = 0v) i ces1 i ces1 - 2.0 i ges - - 225 20 bv ces - volts 600 tolerances (unless specified): .xx .xxx " .03 " .010 collector-emitter saturation voltage (i c = 200a, v ge = 15v) v ge(th) (t b = 25 o c) (t b = 125 o c) collector leakage current (v ce = 480v, v ge = 0v) anti-parallel diode forward voltage (i f = 200a, t b = 25 o c) insulation resistance (all terminals to base @1500v) r insul1 1-g s 2.0 6 volts : amps mamps volts : amps - 1.6 v f volts
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